直流磁控溅射法制备掺钛氧化锌透明导电薄膜  

Preparation and Properties of Titanium-doped Zinc Oxide Films by DC Magnetron Sputtering

作　　者：刘汉法[1] 张化福[1] 袁玉珍[1] 袁长坤[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《材料导报》2009年第22期87-89,共3页Materials Reports

基　　金：山东理工大学创新团队支持计划(2006)

摘　　要：采用直流磁控溅射法在室温水冷玻璃衬底上制备出高质量的掺钛氧化锌(ZnO∶Ti)透明导电薄膜,研究了溅射功率对ZnO∶Ti薄膜结构、形貌和光电性能的影响,结果表明,溅射功率对ZnO∶Ti薄膜的结构和电阻率有显著影响。XRD表明,ZnO∶Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。当溅射功率为130W时,实验制备的ZnO∶Ti薄膜的电阻率具有最小值9.67×10-5Ω.cm。实验制备的ZnO∶Ti薄膜具有良好的附着性能,可见光区平均透过率超过91%。ZnO∶Ti薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。Transparent conducting titanium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by DC magnetron sputtering at room temperature. Micro-structural, optical and electrical properties of ZnO ： Ti films are investigated. The results indicate that the sputtering power plays an important role in the mierostructure and electrical resistivity of ZnO ： Ti films. XRD patterns show that the ZnO ; Ti films have the structure of hexagonal wurtzite with c-axis preferred orientation. When the sputtering power is 130W, it is obtained that the lowest resistivity is 9. 67×10^-5Ω·cm era. All the films present a high transmittance of above 91M in the visible range. ZnO ： Ti films with high transparency and relatively low resistivity deposited at room temperature will be used as transparent electrode in thin film solar cells and liquid crystal display.

关 键 词：ZnO∶Ti 透明导电薄膜 溅射功率 磁控溅射 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055