功率电子模块及其封装技术  

Packaging Structure and Technology of Power Electronic Module

作　　者：俞晓东[1] 何洪[1] 宋秀峰[1] 曾俊[1] 李冉[1] 石志想[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《电子与封装》2009年第11期5-11,共7页Electronics & Packaging

摘　　要：功率电子模块正朝着高频、高可靠性、低损耗的方向发展,其种类日新月异。同时,模块的封装结构、模块内部芯片及其与基板的互连方式、封装材料的选择、制备工艺等诸多问题对其封装技术提出了严峻的挑战。文章结合了近年来国内外的主要研究成果,详细阐述了各类功率电子模块(GTR、MOSFET、IGBT、IPM、PEBB、IPEM)的内部结构、性能特点及其研究动态,并对其封装结构及主要封装技术,如基板材料、键合互连工艺、封装材料和散热技术进行了综述。With the changing of power electronic module, its developing direction is moved to high frequency, high reliability and low loss. However, serious challenges are put forward to packaging technology because of the packaging structure of modules, the interconnection technique of internal chips and substrates, the selec- tion of packaging materials, the preparation technology and so on. Companying with main research achieve- ments at home and abroad, internal structures, performance features and dynamic approach of power electronic modules （GTR, MOSFET, IGBT, IPM, PEBB, IPEM）are discussed. Packaging structure and major technology such as substrates, interconnection processes, packaging materials and thermal dissipation technology of modules are summarized.

关 键 词：功率电子模块 封装结构 封装技术 

分 类 号：TN453[电子电信—微电子学与固体电子学]