逆导型GCT器件结构分析及制造工艺  

Structure Analysis and Manufacturing Technique of RC-GCT Device

作　　者：雷云[1] 蒋谊[1] 陈芳林[1] 

机构地区：[1]株洲南车时代电气股份有限公司电力电子事业部,湖南株洲412001

出　　处：《大功率变流技术》2009年第6期11-13,30,共4页HIGH POWER CONVERTER TECHNOLOGY

摘　　要：逆导型IGCT因采用透明阳极、缓冲层、沟槽隔离和门极硬驱动等半导体新型技术而兼具GTO及IGBT的优点,文章重点分析其结构特点及制造工艺。Reverse-conduct IGCT（RC-IGCT） has the same advantages of both GTO and IGBT due to adopting the novel semiconductor technologies,such as transparent anode,buffer layer,slot isolation and gate hard-drive.Structure properties and manufacturing techniques are analyzed according to the mode of RC-IGCT.

关 键 词：逆导型 IGCT 透明阳极 缓冲层 沟槽隔离 门极硬驱动 

分 类 号：TN34[电子电信—物理电子学]