硅/微晶玻璃阳极键合工艺对键合强度的影响  

Influence of Silicon/Glass-ceramic Anodic Bonding Technology on Bonding Intensity

作　　者：章钊[1] 李宏[1] 杜芸[1] 程金树[1] 

机构地区：[1]武汉理工大学硅酸盐材料工程教育部重点实验室,武汉430070

出　　处：《武汉理工大学学报》2009年第24期5-8,共4页Journal of Wuhan University of Technology

基　　金：国家自然科学基金(50472039);湖北省自然科学基金(2005ABA011)

摘　　要：半导体硅与玻璃的阳极键合技术是微机电系统的关键封装技术,国内外普遍采用硼硅酸盐玻璃作为与硅片封装的阳极键合基片材料,封装温度高达500℃。实验采用Li2O-Al2O3-SiO2（LAS）系统微晶玻璃代替传统的硼硅酸盐玻璃,在200-400℃温度条件下实现了硅/微晶玻璃阳极键合,并分析了电压、温度、时间和压力等工艺参数对键合效果的影响,结果表明在250℃、500 V、10 min和0.5 MPa的条件下,微晶玻璃和硅片实现了良好键合。Anodic bonding technology of semiconductor silicon and glass is a key technology of micro electronic mechanical system （MEMS）. Borosilicate glass is used as anodic bonding material which is packaged with silicon wafer; the bonding temperature is over 500 12. In this work, the Li2O-Al2O3-SiO2 （LAS） glass-ceramics were used to replace conventional borosilicate glass and anodic bonding experiments were carried through at the temperature ranging from 200--400 12. The technical parameters of anodic bonding which include voltage, temperature, time, pressure and bonding property were analyzed, the results showed that the glass-ceramies were well bonded to silicon at 250 12,500 V, 10 min and 0.5 MPa.

关 键 词：硅片 微晶玻璃 阳极键合 键合强度 

分 类 号：TQ171[化学工程—玻璃工业]