场发射阵列硅基底类型对去铝牺牲层工艺的影响  

Effect of Si-Substrate Type of FEA on the Removing of Aluminum Parting Layer

作　　者：裴文俊[1] 林祖伦[1] 祁康成[1] 王小菊[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《电子器件》2009年第6期1011-1014,1018,共5页Chinese Journal of Electron Devices

摘　　要：研究了Spindt场发射阵列铝牺牲层工艺中不同硅基底类型对尖锥的影响,结果表明,在有栅极(Ti-W)和无栅极情况下,p-Si基底的场发射尖锥阵列都会被腐蚀破坏,而n-Si衬底的尖锥形貌完好。这是由于基底材料与尖锥材料之间形成的接触电位差,使高逸出功的p-Si基底与Mo尖锥形成Mo为阳极、p-Si为阴极而导致Mo尖锥被腐蚀;低逸出功n-Si基底则避免了这种现象的发生。During the process of removing aluminum parting layer of Spindt-FEAs,the type of Si-substrate would affect the forming of FEA-tips. The study indicates that the morphology of n-Si FEA-tips are kept quite well,but the p-Si FEA-tips are destroyed both in the structure with gate electrode（Ti-W） and with- out gate. The contact potential difference exists between the substrate materials and the tip materials. Com- pared with Mo,the work function of p-Si is higher while the work function of n-Si is lower. As an anode material, Mo would be corrupted in the process of removing A1 parting layer when using p-Si piece. Conversely,Mo,as a cathode material here,would not be corrupted when the n-Si piece is used.

关 键 词：场发射阵列 硅片 牺牲层 腐蚀 逸出功 

分 类 号：TN405[电子电信—微电子学与固体电子学]