测试方法对硅片表面微粗糙度测量结果影响的研究  

Effect of Different Test Method on Measurement Result of Surface Roughness of Planar Surfaces on Silicon Wafer

作　　者：孙燕[1] 李莉[1] 孙媛[1] 李婧璐[1] 李俊峰[1] 徐继平[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《稀有金属》2009年第6期884-888,共5页Chinese Journal of Rare Metals

摘　　要：随着大规模集成电路的快速发展,硅片表面微粗糙度对于器件制造的影响也越来越受到人们的重视。介绍了几种测量硅片表面微粗糙度的测试方法,并将它们分成三类,简单阐述了每一类测试方法的测试原理,影响测试结果的因素,从实际应用的角度详细阐述了这三类测试方法的适用情况、通过详细的测试数据及图形对这三类测试方法进行了分析,并对这三类测试方法进行了比较。最后简单介绍了纳米形貌和硅片表面微粗糙度之间的关系。The effect of surface roughness of planar surface on silicon wafer to device construction has been paid more attention than before with the rapid development of ULSI. This article described three types of measurement test methods, testing principle and the factors that affect the test resuhs of every type of method. From a practical point of view, the application conditions of these three types of test methods were elaborated. These test methods were analysed by detailed test data and graphics and were compared with earch other. Finally the relationship between nanotopography and silicon surface roughness was briefly introduced.

关 键 词：表面微粗糙度 测量 硅片 

分 类 号：TN307[电子电信—物理电子学]