不同界面层对HfTaON栅介质MOS特性的影响  

Influences of Different Interlayers on Properties of MOS with HfTaON Gate Dielectric

作　　者：徐静平[1] 张洪强[1] 陈娟娟[1] 张雪锋[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《固体电子学研究与进展》2009年第4期593-596,共4页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(60776016)

摘　　要：采用磁控溅射方法,在Si衬底上制备HfTaON高k栅介质,研究了AlON、HfON、TaON不同界面层对MOS器件电特性的影响。结果表明,HfTaON/AlON叠层栅介质结构由于在AlON界面层附近形成一种Hf-Al-O"熵稳定"的亚稳态结构,且AlON具有较高的结晶温度、与Si接触有好的界面特性等,使制备的MOS器件表现出优良的电性能:低的界面态密度、低的栅极漏电、高的可靠性以及高的等效k值(21.2)。此外,N元素的加入可以抑制Hf和Ta的扩散,有效抑制界面态的产生,并使器件具有优良的抵抗高场应力的能力。The HfTaON gate dielectric with different interface layers is deposited on Si wafer by co-sputtering method. The influences of different interlayers of AlON, TaON and HfON on the electrical properties of MOS device are investigated. The results indicate that the HfTaON/ AlON stack gate dielectric MOS device has excellent electrical performances, e.g. low interface- state density, low gate leakage current, high device reliability and large equivalent k value （21.2）. These are probably attributed to formation of a metastable entropy-stabilized Hf-Al-O structure near the HfTaON/AlON interface, and also the AlON interlayer with high crystallization temperature and good interface properties with Si. In addition, diffusion of Hf and Ta could be blocked to a great extent by N incorporation, which effectively suppresses generation of interface states and gives an excellent immunity to high-field stressing.

关 键 词：金属-氧化物-半导体 高K栅介质 HfTaON 氮氧化铝 氮化 

分 类 号：TN386.1[电子电信—物理电子学] TN305.2