氨化温度对Si基GaN纳米结构质量的影响(英文)  

Effect of Ammoniating Temperature on the Quality of GaN Nanostructures on Si Substrates

作　　者：曹玉萍[1] 薛成山[1] 石锋[1] 孙海波[1] 郭永福[1] 刘文军[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014

出　　处：《微纳电子技术》2010年第1期18-24,共7页Micronanoelectronic Technology

基　　金：National Science Foundation of China(90201025,90301002)

摘　　要：通过磁控溅射技术在Si(111)衬底上沉积Ga2O3/Co薄膜,然后在不同温度下氨化制得GaN纳米结构。采用X射线衍射(XRD)、傅里叶红外吸收谱(FTIR)、扫描电子显微镜(SEM)、高分辨透射电镜(HRTEM)和光致发光谱(PL)对样品的结构、形貌和光学特性进行了表征。结果显示合成的GaN纳米结构具有六方纤锌矿结构,且纳米结构的生长受温度影响很大。PL谱显示在388nm处有一强的紫外发光峰,表明其在低维激光器件方面的应用优势。同时对纳米结构的生长机制进行了简单讨论。GaN nanostructures were synthesized on Si （111） substrates through ammoniating the Ga2O3/Co films at different temperatures by magnetron sputtering system. The structure, morphology and optical properties of the samples were characterized by X-ray diffraction （XRD）, Fourier transform infrared spectroscopy （FTIR）, scanning electron microscopy （SEM）, high resolution transmission electron microscopy （HRTEM） and photoluminescence （PL）. The results show that the synthesized GaN nanostructures are of hexagonal wurtzite structure, and the growth of GaN nanostructures is affected greatly by the temperature. The PL results reveal a strong UV emission at 388 nm, which will have a good advantage in applications of low-dimensional laser devices. The growth mechanism was also briefly discussed.

关 键 词：GAN纳米结构 SI衬底 钴 氨化 溅射 

分 类 号：TN304.23[电子电信—物理电子学] TN383