W-Mo合金CMP工艺参数的影响与优化研究  

Study on the Influence and Optimization of Process Parameters of Tungsten Molybdenum Alloys in CMP

作　　者：边征[1] 王胜利[1] 刘玉岭[1] 肖文明[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《半导体技术》2010年第2期146-149,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(10676008);河北省教育厅科学研究计划项目(2007429)

摘　　要：简述了金属化学机械抛光的机理。将半导体制造工艺中的化学机械抛光技术拓展并应用到W-Mo合金表面加工中,在实现W-Mo合金材料表面高平坦度、低粗糙度的前提下,提高W-Mo合金去除速率。针对W-Mo合金的性质,选用碱性抛光液,并采用田口方法对抛光液pH值、抛光压力和抛光盘转速三个重要因素进行了优化设计,得到以去除速率为评价条件的综合最优抛光参数。实验分析表明,当抛光液pH值为11,抛光压力为80 kPa,抛光盘转速60 r/min时,可以获得较高的去除速率。The mechanism of metal chemical mechanical polishing （CMP） technology was discussed. The CMP technology in the semiconductor manufacturing process were expanded and applied to the surface processing of tungsten molybdenum alloys. The removal rate of tungsten molybdenum alloys was improved under the prerequisite of achieving the high flatness, low roughness requirements of tungsten molybdenum alloys material process. The alkali chemical polishing was used according to the properties of tungsten molybdenum alloys, optimized design of slurry pH, polishing pressure and plate rotation speed were carried out by Tagucbi method, and the comprehensive optimized polishing parameter used in evaluating the removal rate were obtained. The experiment analysis results show that when the slurry pH is 11, the polishing pressure is 80 kPa and the plate rotation speed is 60 r/min, higher removal rate can be obtained.

关 键 词：W-Mo合金 化学机械抛光 田口方法 去除速率 

分 类 号：TN305.2[电子电信—物理电子学]