100nm P型超浅结制作工艺研究  

Study on P-Type Ultra-Shallow Junction Process Using F Implantation and Rapid Thermal Annealing

作　　者：鲜文佳[1,2] 刘玉奎[2,3] 

机构地区：[1]重庆大学光电工程学院,重庆400044 [2]模拟集成电路国家级重点实验室,重庆400060 [3]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2010年第1期145-148,共4页Microelectronics

摘　　要：介绍了一种P型超浅结的制作工艺。该工艺通过F离子注入和快速热退火技术相结合,获得了比较先进的100nm以内的P型超浅结;重点研究了影响超浅结形成的沟道效应和瞬态增强扩散效应;详细介绍了制作过程中对沟道效应和瞬态增强扩散效应的抑制。Fabrication of P-type ultra-shallow junction was presented. By using F ion implantation and rapid thermal annealing （RTA）, a P-type ultra-shallow junction below 100 nm was obtained. Channeling effect and transient enhanced diffusion （TED） effect, which affect the formation of ultra-shallow junction, were studied in particular. Furthermore, the inhibition of the two effects, which was very important in the process,was also discussed.

关 键 词：超浅结 离子注入 快速热退火 沟道效应 瞬态增强扩散效应 

分 类 号：TN37[电子电信—物理电子学]