应用LP-MOCVD方法研制InGaAs/InP应变量子阱LD  

InGaAs/InP Strained Quantum Well LD Made by LP MOCVD

作　　者：刘宝林[1] 黄钟英[1] 

机构地区：[1]厦门大学物理学系

出　　处：《厦门大学学报（自然科学版）》1998年第6期857-860,共4页Journal of Xiamen University：Natural Science

摘　　要：利用低压－金属有机化合物蒸汽沉积（ＬＰ－ＭＯＣＶＤ）的方法研究在生长过程中温度和时间对ＰＮ结结位的影响，并用它来控制ＩｎＧａＡｓ／ＩｎＰ量子阱激光器的ｐ－ｎ结结位．探讨在ＩｎＰ材料中使用ＤＥＺｎ和Ｈ２Ｓ做掺杂源时，Ｐ型和Ｎ型的杂质浓度和ＰＮ结控制的条件，得出在０．５％压缩条件下有源区阱层ＩｎＧａＡｓ和ＩｎＰ的应变量子阱激光器（ＬＤ）．当激光器实现室温脉冲激射时，可获得峰值功率＞１０６ｍＷ、阈值电流密度为２．It is found by using LP MOCVD method that the growth temperature and it′s duration have an effect on the pN junction position in the growth process of InGaAs/InP. This effect can be used for the control of the pN junction position in making InGaAs/InP quantum well LD. The impurity concentrations of p type InP doped with H 2S and n type InP doped with DEZn and the related pN junction control conditions are also explored. The source area well layer InGaAs/InP strained QW′s LD is made under the 0 5% strain condition. The pulse lasing of this structure at room temperature can provide the peak power greater than 106 mW and the threshold current density 2 6 kA/cm 2.

关 键 词：LP-MOCVD 应变 量子阱 激光器 INGAAS 磷化铟 

分 类 号：TN248.4[电子电信—物理电子学]