量子点的湿法腐蚀制备及尺寸分布研究  

FABRICATION OF QUANTUM DOTS BY WET ETCHING AND STUDY OF SIZE DISTRIBUTION

作　　者：刘兴权[1] 万明芳[1] 陈效双[1] 张波[1] 陆卫[1] 沈学础[1] 

机构地区：[1]中科院上海技术物理所红外物理国家开放实验室

出　　处：《红外与毫米波学报》1998年第6期401-404,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金

摘　　要：介绍了用可见光光刻后用湿法腐蚀制备ＧａＡｓ／ＡｌＧａＡｓ量子点的方法，并用小光点光荧光的方法检测了所制备量子点的均匀性，从理论上给出量子点的尺寸分布，并结合多量子阱阱宽的涨落，分析了荧光峰的线型和展宽机制．Fabrication of GaAs/AlGaAs quantum dots by wet etching was accomplished by visible light lithography. The uniformity of the size was determined by tiny spot photoluminescence. Theoretical calculation was done to simulate the size distribution and to compare with the experimental results, in which the thickness fluctuation of quantum well was considered.

关 键 词：量子点 湿法腐蚀 荧光光谱 砷化镓 尺寸分布 

分 类 号：TN304.23[电子电信—物理电子学] O471.1[理学—半导体物理]