GaAs基PHEMT加速度传感器的研究  

Research on the GaAs-Based PHEMT Acceleration Sensor

作　　者：贾晓娟[1] 张斌珍[1] 刘俊[1] 薛晨阳[1] 侯婷婷[1] 谭振新[1] 王杰[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《传感技术学报》2010年第2期188-191,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然基金重点项目资助(50730009)“e指数半导体器件嵌入式微纳机械结构高灵敏传感器基础研究”;纳米晶体管嵌入式传感结构加工工艺及其性能研究(2008CB317104)

摘　　要：PHEMT结构一种高电子迁移率晶体管,以其高频和低噪声等方面的优越性,成为当今微电子领域中最活跃的研究主题之一。将其良好的力敏特性应用在加速度计方面更是成为前沿的研究方向。基于GaAs基PHEMT结构压阻效应,设计加工出一种悬臂梁式微加速度传感器,通过力作用在加速度计上,改变PHEMT结构漏极电流的输出,并通过外围测试电路来检测该电流变化,从而实现力电转换。文中,对其基本原理和结构设计进行阐述,并进行力学特性的研究。结果表明,在动态测试下,PHEMT结构的漏极输出电流与栅压、漏压之间的关系与静态测试I-V特性曲线保持一致。该加速度计具有良好的线性特性,经过测试在饱和区灵敏度为0.177 mV/gn。Pseudomorphic HEMT has become a most active research topic of micro-electronics field because of its advantages in high-frequency and low-yawp.It is one of the research directions of the most forward position to fabricate accelerator with the force-sensitive characteristic of PHEMT.According to the piezoresistive effect theory of GaAs-based PHEMT,a novel cantilever accelerated sensor has been designed and fabricated.The drain current output of PHEMT changes when the force is applied on the cantilever.And then the change of drain current is detected through the external testing circuit.The structure and mechanical characteristics are described in this paper.The testing results show that the relationship between drain current and gate voltage,drain voltage under the dynamic test is accordant with the static IV characteristic.The accelerometer has good linearity and the sensitivity has been calculated that is 0.177 mV/gn in saturation region.

关 键 词：微加速度计 PHEMT 动态测试 灵敏度 GAAS 

分 类 号：TN386.3[电子电信—物理电子学] TN304.07