溅射压强对低阻高透过率掺钛氧化锌透明导电薄膜的影响  

Influence of Sputtering Pressure on the Properties of Transparent Conductive Titanium-doped Zinc Oxide Thin Films

作　　者：刘汉法[1] 袁玉珍[1] 张化福[1] 袁长坤[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《人工晶体学报》2010年第1期185-189,共5页Journal of Synthetic Crystals

基　　金：山东省自然科学基金(No.ZR2009GL015)

摘　　要：利用直流磁控溅射法在室温水冷玻璃衬底上制备出了高质量的掺钛氧化锌透明导电薄膜(ZnO:Ti)。研究了溅射压强对ZnO:Ti薄膜结构、形貌和光电性能的影响。研究结果表明,溅射压强对ZnO:Ti薄膜的结构和电阻率有显著影响。X射线衍射(XRD)表明,ZnO:Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。在溅射压强为5.0Pa时,实验获得的ZnO:Ti薄膜电阻率最小值为1.084×10-4Ω.cm。实验制备的ZnO:Ti薄膜具有良好的附着性能,可见光区平均透过率超过91%。ZnO:Ti薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。Transparent conducting titanium-doped zinc oxide films with high transparency and relatively low resistivity had been successfully prepared by DC magnetron sputtering at room temperature.Micro-structural,optical and electrical properties of ZnO∶Ti films were investigated.SEM photos indicate that the sputtering pressure plays an important role on the microstructure and electrical resistivity of ZnO∶Ti films.The electrical resistivity decreases when the sputtering pressure increases from 1.0 Pa to 5.0 Pa.When the sputtering pressure is 5.0 Pa,it is obtained that the lowest resistivity is 1.084 ×10-4 Ω · cm.The electrical resistivity increases when the sputtering pressure increases from 5.0 Pa to 6.0 Pa.All the films present a high transmittance of above 91% in the visible range.ZnO∶Ti films with high transparency and relatively low resistivity deposited at room temperature will be used as transparent electrode in thin film solar cells and liquid crystal display.

关 键 词：ZnO:Ti薄膜 透明导电薄膜 溅射压强 磁控溅射 

分 类 号：O484[理学—固体物理]