GaP(100)表面硫钝化与稀土金属Gd界面形成的同步辐射光电子能谱研究  

Photoemission Study of S Passivated GaP(100) and Interface of Gd/S GaP(100) With Synchrotron Radiation

作　　者：孙玉明[1] 陆尔东[1] 徐法强 徐世红 余小江 张发培 徐彭寿 张新夷 

机构地区：[1]中国科学技术大学国家同步辐射实验室

出　　处：《Journal of Semiconductors》1999年第1期19-24,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：利用同步辐射光电子能谱研究了ＣＨ３ＣＳＮＨ２钝化的ＧａＰ（１００）表面和稀土金属Ｇｄ淀积到Ｓ－ＧａＰ（１００）表面的界面形成，结果表明ＣＨ３ＣＳＮＨ２溶液对ＧａＰ（１００）表面具有钝化作用，形成了Ｇａ和Ｐ的硫化物钝化层，对钝化表面退火，Ｐ－Ｓ键逐渐消失，而仅仅留下了Ｇａ－Ｓ键．Ｇｄ淀积到硫钝化退火的ＧａＰ表面，Ｐ的扩散被有效地阻止，而Ｓ仍保持在界面处，Ｇｄ与表面的元素态Ｐ和二聚体Ｇａ反应，形成金属Ｇａ向淀积的Ｇｄ金属层扩散，导致金属Ｇａ在表面偏析．Abstract CH 3CSNH 2 passivated GaP(100) surface and interface of rare earth Gd deposited on S passivated GaP(100) have been studied by synchrotron radiation photoemission. The results show that the sulfides of Ga and P can be formed on GaP surface by CH 3CSNH 2 treatment. By annealing for passivated surface, the P S bond is gradually disappered and only Ga-S bond is remained in the surface. While Gd is deposited on such S GaP(100) surface, we found that eliminates the problems of the substrate P interdiffusion through the overlayer due to S being remained at the interface.

关 键 词：磷化镓 硫钝化 稀土金属 钆 同步辐射 

分 类 号：TN304.23[电子电信—物理电子学]