掺碳SiO_2薄膜的室温可见光致发光研究  

Room Temperature Visible Photoluminescence of C Doped SiO 2 Films

作　　者：王印月[1,2] 薛华[1,2] 郭永平[1,2] 甘润今[1,2] 孙燕杰[1,2] 张亚菲[1,2] 杨映虎[1,2] 陈光华[1,2] 

机构地区：[1]兰州大学物理系 [2]北京机械工业学院基础部

出　　处：《Journal of Semiconductors》1999年第2期157-161,共5页半导体学报（英文版）

基　　金：国家自然科学基金;甘肃省自然科学基金

摘　　要：用射频共溅射技术和后退火工艺制备出了埋入ＳｉＯ２中的碳复合膜，在室温下测到了强的可见光致发光谱（峰位在２．２２ｅＶ）．研究了衬底温度、退火温度、薄膜厚度对发光谱的影响．通过喇曼散射谱、红外透射谱和Ｘ光衍射谱的测量，对复合膜的结构进行了探讨．Abstract The composite films of C and SiO 2 were fabricated by RF co sputtering technique and post annealing treatment. Photoluminescence (PL) measurements show that strong PL spectra with a peak located at about 2 22eV are obtained at room temperature, which strongly depend on substrate temperature, annealing temperature, and sample thickness. By using Raman scattering, IR transmission and XRD measurements, the structure of the composite films is investigated.

关 键 词：二氧化硅 可见光致发光 掺杂 半导体纳米材料 

分 类 号：TN304.21[电子电信—物理电子学] TN305.3