Ar^+离子束对U薄膜表面粗糙度的影响  

Influence of Ar^+ Ion Beam Sputter on Surface Roughness of Uranium Film

作　　者：张厚亮[1] 吕学超[1] 任大鹏[1] 李嵘[1] 赖新春[1] 赵天明[1] 

机构地区：[1]中国工程物理研究院,四川绵阳621900

出　　处：《稀有金属材料与工程》2010年第5期889-891,共3页Rare Metal Materials and Engineering

摘　　要：采用Ar+离子束对U薄膜表面进行反应溅射,通过白光干涉仪和台阶仪的测量与分析,着重研究Ar+离子束溅射能量、入射角度对其表面粗糙度Ra的影响,并与Ar+离子束刻蚀试验进行比对。结果表明,以30°角入射,随溅射时间的增加,能量为0.5keV的Ar+离子束较1.0keV对U薄膜表面粗糙度趋于减小,表面愈光滑,溅射深度仅限于纳米级,而与金属Mo的刻蚀效果相比与之相反。Ar+离子束溅射对材料表面具有超精细抛光的效果,辅之于离子束微米级刻蚀减薄,将有助于U薄膜表面精细加工。Ar＋ ion beam was used to sputter the uranium film surface.Through measurement and analysis of white light interferometer and step device,the influence of sputter energy and incidence angle of the Ar＋ ion beam on the surface roughness Ra of uranium film was researched,and that was compared with the etching test of Ar＋ ion beam.Results show that with the incidence angle of 30° and increasing of the sputter time,the uranium film sputtered by Ar＋ ion beam of 0.5 keV energy has smaller roughness and smoother surface than that sputtered by the beam of 1.0 keV energy.The sputter depth of the beam with 0.5 keV is only a few nanometers but the etching effect on Mo film is opposite.Ar＋ ion beam sputter has the fine polishing effect on material surface.With the assistance of ion beam micron-sized etching thinning,it can be used for precision machining of uranium film surface.

关 键 词：Ar+离子束 反应溅射 刻蚀 U薄膜 表面粗糙度 

分 类 号：O484[理学—固体物理]