掺氮ZnSe外延层的光致发光研究  

PHOTOLUMINESCENCE PROPERTIES OF NITROGEN DOPED ZnSe EPILAYERS

作　　者：朱作明[1] 刘南竹 李国华[1] 韩和相[1] 汪兆平[1] 王善忠[2] 何力[2] 姬荣斌[2] 巫艳[2] 

机构地区：[1]中国科学院半导体研究所半导体超晶格国家重点实验室 [2]中国科学院上海技术物理研究所半导体薄膜材料研究中心红外物理国家重点实验室

出　　处：《红外与毫米波学报》1999年第1期13-18,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金

摘　　要：报导了掺氮ＺｎＳｅ外延层的光致发光，研究了与氮受主有关的发光峰随温度和激发强度的变化关系．１０Ｋ下施主－受主对发光峰随激发强度的增加向高能方向移动，且峰强呈现饱和趋势．在１０～３００Ｋ温度范围光致发光谱表明，随着温度增加，由于激子在受主束缚激子态和施主束缚激子态之间转移。The photoluminescence(PL) properties of nitrogen doped ZnSe epilayers grown on semi insulating GaAs(100) substrates by MBE using a rf plasma source for N doping were investigated. The PL peak which can be related to N acceptor was observed in the PL spectra of ZnSe:N smaples. At 10K, as the excitation power density increases, the energy of donor acceptor pair(DAP) emission shows a blue shift and its intensity tends to saturate. As the temperature increases over a range from 10K to 300K, the relative PL intensity of donor bound exciton to that of the acceptor bound exciton increases due to the transfer between two bound excitons.

关 键 词：光致发光 束缚激子 掺氮 硒化锌 外延层 

分 类 号：TN304.22[电子电信—物理电子学] O472.3[理学—半导体物理]