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作 者:付淑英[1]
机构地区:[1]韩山师范学院物理与电子工程系,广东潮州521041
出 处:《热处理技术与装备》2010年第3期27-30,38,共5页Heat Treatment Technology and Equipment
基 金:韩山师范学院2009年教授启动项目;江西省新余市2008年自然科学基金项目(2008zrkxjj03);江西省教育厅2009年科技计划项目(GJJ09385)
摘 要:采用直流反应磁控溅射方法在Si(111)基底上沉积了氮化钛薄膜。研究了在溅射沉积过程中,改变腔体气压对所制备的薄膜结构及性能的影响。研究发现:在保持其它工艺参数不变的条件下,沉积的TiN薄膜在不同溅射气压下生成的物相不同,薄膜的主要成分是立方相TiN,薄膜的结晶均显示出明显的TiN(200)择优取向。在腔体气压为0.5 Pa时出现的TiN(200)衍射峰最强、择优取向最明显。随着腔体气压的增加,薄膜厚度变小,而衍射峰则呈减弱的趋势,TiN薄膜的生长可能无择优取向。当腔体气压为0.35 Pa时,膜层致密均匀,没有大尺寸缺陷且粗糙度好,薄膜的结晶度最好,表面也最光滑,在测试波长范围内对光的平均反射率最大,可满足光学薄膜质量方面的要求。Titanium nitride thin film is deposited on Si ( 111 ) substrate by DC reactive magnetron sputtering. It is studied that influences of changes in cavity pressure on the structure and performance of thin film when other process parameters are not changed during sputtering deposition. It is discovered that the phases in the deposited TiN thin film are different at different sputtering pressure and the main phase of thin film is cubic TiN and the crystal of thin films appear a obvious TIN(200) preferred orientation. The diffraction peak of TIN(200) is the strongest and the preferred orientation is the most obvious when the cavity pressure is 0.5 Pa. With the increasing of cavity pressure, the thickness of the thin film got smaller, while the diffraction peaks showed weakening trend, and TiN film growth may be no perferred oriention. When the cavity pressure is 0.35 Pa, the film layer is dense, uniform, no large-size defects, good roughness, the best crystaUinity of thin film, the most smooth surface, the biggest average reflectivity in the range of test wavelength and can meet the requirements of quality of optical thin films.
分 类 号:TB383.2[一般工业技术—材料科学与工程]
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