衬底温度对直流磁控溅射法制备掺锆氧化锌透明导电薄膜性能的影响(英文)  

Effect of Substrate Temperature on Properties of ZnO:Zr Transparent Conductive Thin Films Deposited by DC Magnetron Sputtering

作　　者：张化福[1] 刘瑞金[1] 刘汉法[1] 陈钦生[1] 王新峰[1] 梅玉雪[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《人工晶体学报》2010年第3期766-770,775,共6页Journal of Synthetic Crystals

基　　金：supported by Shandong Province Natural Science Foundation (No.ZR2009GQ011)

摘　　要：利用直流磁控溅射法在石英衬底上制备出了高透明导电的掺锆氧化锌(ZnO:Zr)薄膜。研究了衬底温度对ZnO:Zr薄膜结构、形貌及光电性能的影响。XRD表明实验中制备的ZnO:Zr为六方纤锌矿结构的多晶薄膜,具有垂直于衬底方向的c轴择优取向。实验所制备ZnO:Zr薄膜的晶化程度和导电性能对衬底温度有很强的依赖性。当衬底温度为300℃时,ZnO:Zr薄膜具有最小电阻率7.58×10-4Ω.cm,其可见光平均透过率超过了91%。Highly transparent and conductive zirconium-doped zinc oxide （ZnO：Zr） thin films were deposited on quartz substrates by DC magnetron sputtering method.The effect of substrate temperature on the structural,morphology,electrical and optical properties of ZnO：Zr films were investigated in detail.The XRD results show that the deposited films are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis.The crystallinity and conductivity of the deposited films are found to largely depend on substrate temperature.At the optimum substrate temperature of 300 ℃,the deposited films have the lowest resistivity of 7.58×10-4 Ω·cm and a high transmittance of above 91% in the visible range.

关 键 词：掺锆氧化锌 衬底温度 直流磁控溅射 薄膜 

分 类 号：O484[理学—固体物理]