GaN核辐射探测器材料与器件研究进展  

Progress of GaN Material Research and Its Applications in Nuclear Detector

作　　者：陆敏[1] 于国浩[1] 张国光[2] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215125 [2]中国原子能科学研究院核技术应用研究所,北京102413

出　　处：《原子能科学技术》2010年第6期750-756,共7页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(10875084);江苏省自然科学基金资助项目(BK2008174);苏州市应用基础研究计划资助项目(SYJG0915);国家重点基础研究发展计划资助项目(G2009CB929300)

摘　　要：文章介绍GaN材料作为核探测器的潜在优势和国内外的研究状况,并概要综述GaN材料外延的主要技术、特点及其最新发展。通过模拟计算,总结了使用GaN制备核探测器对材料的基本要求。同时,根据目前的研究现状,提出了在GaN材料生长和器件制作方面存在的主要技术问题及其解决方向。The research progress of GaN nuclear detectors and their potential application advantages in the world were introduced.Several popular growth technologies of GaN films and their characteristics were described.Through theory simulation and calculation,the qualifications of GaN films for nuclear detectors were discussed.Based on the current research situation of the GaN,some problems and their solutions to the film growth and detectors fabrication were proposed.

关 键 词：GAN 核探测器 金属有机化学气相淀积 氢化物气相外延 

分 类 号：TN304.2[电子电信—物理电子学]