PZT铁电薄膜底电极制备工艺的研究  

Preparation of Bottom Electrode for PZT Ferroelectric Thin Films

作　　者：江政[1] 杨成韬[1] 霍伟荣[1] 赵鹏[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《分析测试技术与仪器》2010年第2期78-82,共5页Analysis and Testing Technology and Instruments

基　　金：国家重点基础研究发展计划(973)预研项目(编号61363z)

摘　　要：利用磁控溅射方法在Si(001)基片上制备Ti/Pt底电极,其厚度大概分别为20、100 nm,其中Ti电极作为缓冲层,随后在上面溅射PZT铁电薄膜.研究了不同电极的制备工艺对电极形貌、取向以及对PZT铁电薄膜的制备带来的影响.结果表明,底电极的溅射温度以及退火温度对于底电极起着至关重要的作用,同时具有良好(111)取向的、致密性较好的底电极对于PZT铁电薄膜的生长具有重要的影响.Ti/Pt bottom electrodes with thickness of about 20 nm and 100 nm have been synthesized on Si（001）substrates by using a magnetron sputtering method,the Ti electrode is used as the buffer,then PZT thin films are grown on the electrode.The relationship of the preparation technology of Pt/Ti electrode on the structure and property of the film has been discussed.The results show that spurttering temperature and annealing temperature are important to the bottom electrode,and also the compactability of the electrode has key influence on the growth of PZT thin films.

关 键 词：磁控溅射 PZT铁电薄膜 底电极 退火 

分 类 号：R392.3[医药卫生—免疫学]