等离子体浸没离子注入技术与设备研究  

Research of Plasma Immersion Ion Implantation Technology and Equipment

作　　者：刘杰[1,2] 汪明刚[1] 杨威风[1] 李超波[1] 夏洋[1] 

机构地区：[1]中国科学院微电子研究所,微电子器件与集成技术重点实验室,北京100029 [2]兰州大学物理科学与技术学院,兰州730000

出　　处：《半导体技术》2010年第7期626-629,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60727003);国家重大专项项目(2009ZX02037)

摘　　要：基于传统束线离子注入在制造器件源漏超浅结时面临的挑战,介绍了一种新的超浅结的制造方法——等离子体浸没离子注入技术,总结了该技术在制造超浅结时的优点,阐述了放电方式、线圈结构、偏压电源等系统核心部件的设计,自行设计并搭建了等离子体浸没离子注入系统。采用ESPion高级朗缪尔探针测试和计算流体力学模拟方法对比研究了等离子体的特性,结果显示,在一定功率范围内等离子体密度随放电功率增加类似线性地增加;采用二次离子质谱仪对B和P的注入样片进行深度剖析,给出了偏压为-500V时B和P的注入深度分布曲线,表明注入时间既影响注入剂量,又影响峰值的位置和注入深度。Based on the challenges of conventional beam line ion implantation while elaborating source drain extension,a novel way of elaborating ultra shallow junction——plasma immersion ion implantation is introduced.The advantages are summarized comparing with conventional beam line ion implantation,and the design of the core components of plasma immersion ion implantation equipment is elaborated including the way of discharge gas,the shape of coil and the pulse bias power supply.A plasma immersion ion implantation equipment were designed and set up.Plasma characteristics were investigated using ESPion advanced langmuir probes and computational fluid dynamics.The result shows that ion density increased linearly with the increasing of RF input powers.Use of secondary ion mass spectroscopy,an in-depth test of wafers implanted with B or P were taken and the implantation results were given at the energy of-500 V.It shows that not only the implantation concentration,but also the peak shape and the depth are affected by the implanting time.

关 键 词：等离子体浸没离子注入 超浅结 感应耦合 线圈结构 脉冲偏压电源 

分 类 号：TN305.3[电子电信—物理电子学]