体硅热膜传感器单片集成工艺的研究  

Study of Monolithic Integrated Technique for Bulk Silicon Thermal Convective Sensor

作　　者：邹学锋[1] 沈路[1] 何洪涛[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2010年第7期437-442,450,共7页Micronanoelectronic Technology

摘　　要：针对MEMS热膜式传感器的发展趋势和在实用化过程中存在的问题,提出了一种新型的单片电路和体硅MEMS热膜式传感器实现集成制造的嵌入式CMOS工艺技术,解决了MEMS制造工艺和CMOS集成电路工艺之间存在的兼容性问题。通过这种嵌入式CMOS工艺技术,可以实现具备最小体积、最低成本的MEMS器件。通过这种嵌入式热膜式传感器和CMOS处理电路的单片集成制造工艺,实现了一款热膜式传感器和IC放大电路的集成部件,并完成了相关基本电性能测试和传感器功能的演示验证,证明了设计的工艺路线的可行性。Based on the development tendency of MEMS thermal convective sensors and the exis-ting problems in practice,a novel embedded CMOS process which integrated the monolithic circuit and the MEMS bulk-silicon thermal convective sensor in one chip was presented,and the compatibility between MEMS process and CMOS IC fabrication was solved.MEMS devices with minimum volume and cost were realized by the embedded CMOS process.An integrated component of the thermal convective sensor and IC amplifier circuit was realized by the embedded thermal convective sensor and the CMOS monolithic integrated technique.The demonstration and verification of relevant electrical property and function of the sensor were completed.The result proved the feasibility of the embedded CMOS process.

关 键 词：微电子机械系统 体硅工艺 单片集成 温度兼容性 交叉污染 

分 类 号：TH703[机械工程—仪器科学与技术]