直接形成不连续铜膜的硅金属诱导晶化  

Metal induced crystallization of silicon film via direct forming of discontinuous copper film

作　　者：王健[1] 李德杰[1] 万媛[1] 罗毅[1] 查良镇[1] 

机构地区：[1]清华大学电子工程系,北京100084

出　　处：《真空》2010年第4期13-16,共4页Vacuum

摘　　要：为发展低成本的多晶硅薄膜太阳能电池,采用磁控溅射技术,通过选择不同极性的表面和改变衬底温度,在普通钠钙玻璃衬底上直接形成了不连续的金属铜薄膜。以该薄膜作为诱导金属,在高温真空条件下对磁控溅射的非晶硅薄膜实现了固相金属诱导晶化。根据X射线衍射仪和拉曼位移光谱仪的测试结果,诱导晶化产生硅薄膜的晶粒尺寸约56 nm,晶化率达到84%。To develop the polysilicon thin-film PV cells at low cost,the discontinuous Cu film was formed directly on the common soda-lime glass as substrate by the magnetron sputtering process in which the film surfaces with different polarities were selected with substrate temperature changed.The Cu film thus obtained was taken as the metal to implement the solid metal induced crystallization of amorphous silicon thin films prepared by magnetron sputtering in vacuum at high temperature.As the test results from XRD and Raman displacement spectroscopy,the grain size of the silicon thin films formed due to metal induced crystallization is 56nm with a crystallization rate 84%.

关 键 词：光伏电池 多晶硅薄膜 金属诱导晶化 磁控溅射 不连续铜薄膜 

分 类 号：TK51[动力工程及工程热物理—热能工程]