溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响  

Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering

作　　者：祐卫国[1] 张勇[1] 李璟[1] 杨峰[1] CHENG C H 赵勇[1,2] 

机构地区：[1]西南交通大学超导研究开发中心材料先进技术教育部重点实验室,四川成都610031 [2]School of Materials Scienee and Engineering, University of New South Wales, Sydney, NSW 2052, Australia

出　　处：《发光学报》2010年第4期503-508,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(50588201,50872116);国家重大基础研究项目“973”(2007CB616906);国家高科技项目“863”(2007AA03Z203);高等学校博士点专项科研基金(SRFDP200806130023);西南交通大学科研基金(2008B15)资助项目

摘　　要：用射频反应磁控溅射法在不同溅射压强和氩氧比下制备了ZnO薄膜,通过X射线衍射（XRD）、扫描电镜（SEM）和光致发光（PL）谱等研究了溅射压强和氩氧比对ZnO薄膜结构和光学性质的影响。测量结果显示,所制备的ZnO薄膜为六角纤锌矿结构,具有沿c轴的择优取向;溅射压强P=0.6Pa,氩氧比Ar/O2=20/5.5sccm时,（002）晶面衍射峰强度和平均晶粒尺寸较大,（O02）XRD峰半峰全宽（FWHM）最小,光致发光紫外峰强度最强。Thin ZnO films were prepared by RF reactive magnetron sputtering with different sputtering pressure and argon-oxygen ratio.The effect of the sputtering pressure and argon-oxygen ratio on the structure and optical properties of the ZnO films were studied using the X-ray diffraction （XRD）,scanning electron microscopy （SEM） and F-7100 photoluminescence （PL） spectroscopy.The results indicated that the thin ZnO films have hexagonal wurtzite single phase structure and a preferred orientation with the c axis perpendicular to the substrates.When the sputtering pressure is 0.6 Pa and the argon-oxygen ratio is Ar/O2=20 /5.5 sccm,the （002） plane diffraction peak intensity and the grain size are larger,the FWHM of （002） peak is the smallest,UV photoluminescence peak intensity is the strongest.

关 键 词：ZNO薄膜 射频反应磁控溅射 溅射压强 氩氧比 光致发光 

分 类 号：O482.31[理学—固体物理]