先进相移掩模(PSM)工艺技术  

Advanced Phase Shift Mask Technology

作　　者：彭力[1] 陈友篷[1] 尤春[1] 周家万[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035

出　　处：《电子与封装》2010年第9期41-45,共5页Electronics & Packaging

摘　　要：先进相移掩模(PSM)制造是极大规模集成电路生产中的关键工艺之一,当设计尺寸(CD)为0.18μm时,就必须在掩模关键层采用OPC(光学邻近校正)和PSM(相移技术),一般二元掩模由于图形边缘散射会降低整体的对比度,无法得到所需要的图形。通过相位移掩模(PSM)技术可以显著改善图形的对比度,提高图形分辨率。相移掩模是在一般二元掩模中增加了一层相移材料,通过数据处理、电子束曝光、制作二次曝光对准用的可识别标记、二次曝光、显影、刻蚀,并对相移、缺陷等进行分析和检测,确保能达到设计要求。One of the ULSI manufacture key technology is Advanced Phase Shift Mask technology, When the design CD is 0.18/a m,we must utilize the OPC or PSM （phase shifting mask） technology in the key layer mask manufacture. The contrast of binary mask will go to bad for scattering, so we can＇t acquire the correct pattern.We can obviously improve the contrast and resolve after utilizing the PSM technology in the mask manufacture, Phase shifting mask is achieved after adding a shift material to the binary mask, then from data preparation,E- beam exposure,adding a secondary exposure mark,secondary exposure,developing,etching.Phase shifting mask can meet to the design aims by analysising the phase shift degrees and defects.

关 键 词：相移掩模 电子束曝光 相位角分析 缺陷检测 

分 类 号：TN306[电子电信—物理电子学]