基于MESFET的GaAs基微加速度计的设计与性能测试  

Design and Testing on GaAs Micro-Accelerometer Based on MESFET

作　　者：谭振新[1] 薛晨阳[1] 侯婷婷[1] 贾晓娟[1] 史伟莉[1] 刘俊[1] 张文栋[1] 

机构地区：[1]中北大学电子与计算机科学技术学院,山西太原030051

出　　处：《测试技术学报》2010年第5期405-409,共5页Journal of Test and Measurement Technology

基　　金：国家自然科学基金重点资助项目(50730009)

摘　　要：利用金属-半导体结型场效应晶体管(MESFET)作为微加速度计的敏感单元,设计一种4梁-质量块微加速度计结构.通过ANSYS分析软件进行仿真,敏感单位放置于悬臂梁根部的应力最大处,以获得最大的灵敏度.将封装好的微加速度计结构,利用惠斯通电桥测试电路,检测不同载荷下的输出特性,验证了微加速度计的力电耦合效应.测试结果表明,该微加速度计的线性度较好,其最大加载范围可达到24 g,且饱和区的灵敏度可达到4.5 mV/g,为高灵敏微传感器的研究奠定了一定的基础.A four cantilever-mass accelerometer was designed by using the Metal-Semiconductor injunction Field Effect Transistors（MESFETs） as the sensitivity unites.Through the ANSYS analysis software,the MESFETs were located at the maximum stress point near the root of the cantilevers to obtain high sensitivity.The output characteristics of the packaged accelerometer at different accelerations were researched by using the Wheatstone bridge,and the electromechanical coupling effect was validated.The testing results indicate that the linearity of the accelerometer is well,its measurement range can achieve 24 g, and the sensitivity is 4.5 mV/g at saturation region.The research is of great significance for the development of the high-sensitivity micro-sensor.

关 键 词：MESFET GAAS 灵敏度 线性度 微加速度计 

分 类 号：TN304[电子电信—物理电子学] TP386[自动化与计算机技术—计算机系统结构]