二维半导体问题的特征差分方法和L^∞模估计  

Characteristic Difference Methods and L ∞ Error Estimate for the Semi conductor Device of Two dimensions

作　　者：刘蕴贤[1] 

机构地区：[1]山东大学数学学院

出　　处：《工程数学学报》1999年第2期39-46,共8页Chinese Journal of Engineering Mathematics

基　　金：国家博士点基金

摘　　要：采用了特征差分方法研究了二维半导体问题的电子和空穴浓度方程的非齐次牛曼问题，并用最大模原理得到Ｌ∞－模误差估计。与传统计算方法相比，特征差分方法有比较小的截断误差，且格式简单。Abstract Finite difference methods are combined with the method of characteristics to treat a problem of electron and hole non homogenous Neumanns concentrations equation of semiconductor device of two dimensions. Optimal order error estimates in L ∞ norm are derived. These schemes have much smaller time truncation errors and are able to use longer time steps than those of standard methods. Also, the calculation is simple.

关 键 词：半导体 最大模 特征差分法 L^∞模估计 

分 类 号：O471[理学—半导体物理] O241.82[理学—物理]