中心带雪崩光电二极管的InGaAs PIN四象限探测器  

Quadrant PIN photo-detector integrated APD in the center on the basis of InGaAs heterostructure

作　　者：石柱[1] 何伟[1] 覃文治[1] 向秋澄[1] 

机构地区：[1]西南技术物理研究所,四川成都610041

出　　处：《红外与激光工程》2010年第5期824-829,共6页Infrared and Laser Engineering

摘　　要：介绍了研制的中心带雪崩管的PIN四象限InGaAs光电探测器。这种光电探测器PD芯片具有一个平面结构的InGaAs PIN四象限光电二极管,其中心位置带有一个雪崩光电二极管,位于同一晶片上。探测器的5个PD芯片被安装在各自厚膜集成的前置放大器上,同时封装在一个带光窗的金属壳体中。中心雪崩探测器和四象限探测器的电压响应度、响应时间、等效噪声功率分别为:2.5×105 V/W(1 550 nm)和0.95×104 V/W(1 550 nm);7 ns和20 ns;0.15×10-12 W/Hz1/2和4×10-12 W/Hz1/2,象限间串扰小于3%,象限内不均匀性小于5%。这种探测器可同时用于人眼安全激光测距、激光定位和跟踪。A quadrant PIN detector integrated avalanche photo-diode（APD） in the center on the basis of InGaAs heterostructure was introduced.It consists of a planar InGaAs PIN four-quadrant photo-diode,in the center of which,InGaAs APD in the same crystal chip was formed.The photo-diode chips of the detector were installed on five preamplifier modules and encapsulated in a TO-package with photo-window.The typical performance of center APD gives the voltage responsivity of 2.5×10^5 V/W（1.55 μm）,the response time of less than 7 ns and the NEP of less than 0.15×10^-12 W/Hz1/2.The typical performance of quadrant PIN photo-diode gives the voltage responsivity of 0.95×10^4 V/W（1.55 μm）,the response time of less than 20 ns and the NEP of less than 5×10^-12 W/Hz1/2,The cross-talk of quadrant PIN photo-diode is less than 3% and the non-uniformity is less than 5%.The detector can be used in the long-wavelength（0.95-1.65 μm） eye-safe laser range finding,laser positioning and tracking.

关 键 词：四象限光电探测器 人眼安全激光测距 激光坐标定位 INGAAS PIN和APD 

分 类 号：TN31[电子电信—物理电子学]