磨料对蓝宝石衬底去除速率的影响  

Effects of Abrasive on Removal Rate of Sapphire Substrate

作　　者：刘金玉[1] 刘玉岭[1] 项霞[1] 边娜[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《半导体技术》2010年第11期1064-1066,1082,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(10676008);河北省教育厅计划项目(2007);高等学校博士学科点专项科研基金资助项目(20050080007)

摘　　要：蓝宝石晶体已经成为现代工业,尤其是微电子及光电子产业极为重要的衬底材料,提高其化学机械抛光效率是业界无法回避的问题。在CMP系统中,磨料是决定去除速率及表面状态的重要因素。分析了化学机械抛光过程中抛光液中磨料的作用以及抛光机理,在确保表面状态的基础上,研究了抛光液中磨料体积分数、粒径和抛光液的黏度对速率的影响,指出纳米磨料是蓝宝石衬底抛光的最佳磨料。选用合适的磨料体积分数、粒径及抛光液黏度,不仅获得了良好的去除速率,而且有效地解决了表面状态方面的问题。Sapphire plays a vital role in substrate material in modern industry,especially in microelectronics and photonics industry.It is necessary to improve the efficiency of chemical mechanical polishing.Abrasive is the important factor that plays an important role in removal rate and surface state.The function of abrasive and polishing mechanism were analyzed.Based on surface conditions,the effect of abrasive volume fraction,abrasive particle size,slurry viscosity on the polishing rate were studied.The study pointed out that nanometer abrasive is the best abrasive in sapphire polishing.Choosing the appropriate abrasive volume fraction,particle size and slurry viscosity,an effective removal rate can be obtained,and the problem of surface states can be solved effectively.

关 键 词：蓝宝石衬底 化学机械抛光 磨料 去除速率 粒径 

分 类 号：TN305.2[电子电信—物理电子学]