重掺杂直拉硅单晶氧化诱生缺陷的无铬腐蚀研究  

Study on Chromium-Free Etching for Detection of Oxidation Induced Stacking Faults in Heavily Doped CZ Silicon Ingot

作　　者：曹孜[1] 石宇[1] 李惠[1] 孙燕[1] 边永智[1] 翟富义[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《半导体技术》2010年第12期1178-1182,共5页Semiconductor Technology

基　　金：国家重大科技专项项目(2008ZX02401;2010ZX02302)

摘　　要：采用无铬和含铬两种溶液共同腐蚀不同型号、不同掺杂剂和不同晶向的重掺单晶样品,研究如何更好地使用无铬腐蚀液显示重掺杂晶体氧化诱生缺陷。实验表明反应过程中温度控制在25-30℃,腐蚀液中适当增加缓冲溶剂,可以很好地控制表面腐蚀速度。实验还发现,对于〈100〉重掺样品,使用有搅拌的改良Dash无铬溶液显现的损伤缺陷密度低于有铬择优腐蚀液,而对于〈111〉重掺样品,未见明显差异。最后,探讨了在使用无铬溶液显示重掺Sb晶体缺陷时,缺陷难显现,而且密度低的原因。Heavily doped single crystal samples with different models,different dopant and different orientations were etched by chormium-free solutions and chormium-bearing solutions.How to improve the test method of using chromium-free solutions to show oxidation-induced defects was discussed.Experiments show solution temperature should be controlled at 25-30 ℃.Certain percentage of the buffer solution in chemical can greatly control the surface etching speed.Experiments also show,to 100 heavy doped sample,the oxidation-induced defects density tested through chromium-free solutions is lower than that of chromium-bearing solutions,but to 111 sample,there is no big difference.The reasons of the difficult to show defects with low density founded in heavy doped Sb crystal tested by chromium-free solutions is discussed.

关 键 词：重掺硅 单晶 无铬腐蚀 氧化诱生层错 检测 

分 类 号：TN304.12[电子电信—物理电子学]