一种新的确定少子产生特性的方法——瞬态电容弛豫谱方法  

A New Method for Determining the Generation Characteristics of the Minority Carrier Transient Capacitance Relaxation Spectral Analysis Method

作　　者：解冰[1] 何燕冬[1] 许铭真[1] 谭长华[1] 

机构地区：[1]北京大学微电子所

出　　处：《电子学报》1999年第5期8-10,共3页Acta Electronica Sinica

摘　　要：本文基于差值取样谱定理，提出一种用于同时确定少子寿命及表面产生速度的新方法———瞬态电容弛豫谱方法，该方法利用谱的峰值位置和高度能同时、准确、唯一地得到少子寿命及表面产生速度．同时将该方法与Ｚｅｒｂｓｔ方法得到的结果进行了对比．A new method to determine the minority carrier lifetime and the surface generation velocity simultaneously,called transient capacitance relaxation spectral analysis method,is proposed in this paper.Using this method,the minority carrier lifetime and the surface generation velocity can be obtained simultaneously,accurately and solely from the position and the height of the spectral peak.Meanwhile we compare the results from this method with those from Zerbst method.

关 键 词：少子寿命 瞬态电容 驰豫谱 半导体器件 设计 

分 类 号：TN302[电子电信—物理电子学]