真空和射频溅射对ITO膜性能的影响  

The Properties of ITO Films Effected by DC or RF Magnetron Sputtering

作　　者：黄士勇[1] 曲凤钦[1] 苗晔[1] 

机构地区：[1]烟台大学物理系

出　　处：《真空》1999年第2期15-17,共3页Vacuum

摘　　要：为进一步探求磁控溅射的机理，本文通过用直流和射频两种磁控溅射沉积ＩＴＯ（ＩｎｄｉｕｍＴｉｎＯｘｉｄｅ）膜的方法，由沉积后的ＩＴＯ膜的特性来揭示不同溅射方法的机制。Abstract In order to further pursue the innate characters of magnetron sputtering, the effects of different deposition methods were revealed by the properties of ITO films deposited by DC and RF magnetron sputtering. The essential differences between the DC and RF magnetron sputtering were concluded in this article.

关 键 词：磁控溅射 ITO膜 薄膜 锡铟氧化物 性能 

分 类 号：O484[理学—固体物理]