Gd/GaAs(100)的界面形成和电子结构  

Gd/GaAs(100) Interface Formation and Its Electronic Structures

作　　者：孙玉明[1] 徐彭寿[1] 徐法强[1] 陆尔东[1] 张发培[1] 潘海滨[1] 许保宗[1] 张新夷[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《真空科学与技术》1999年第3期164-168,共5页Vacuum Science and Technology

基　　金：国家自然科学基金资助课题 !批准号No .1 95 740 42。

摘　　要：利用同步辐射光电子能谱技术研究了Gd在GaAs(10 0 )表面的吸附。当吸附厚度小于 0 47nm时 ,界面反应弱 ;在 0 47～ 0 9nm范围内 ,界面反应变得强烈 ;大于 0 9nm时 ,界面反应停止。在吸附过程中Gd 4 f首先是一单峰结构 ,随着Gd的增加 ,Gd 4 f演变为双峰结构。根据对实验数据的分析 。Adsorption of Ga onto GaAs(100) was studied with synchrotron radiation photoelectron spectroscopy.The results showed that the reactivity of the adsorbate and the substrate depends on coverage.The rather weak interaction,at a coverage lower than 0 47 nm,becomes increasingly stronger in the range from 0 47 to 0 9 nm and ceases at the coverage higher than 0 9 nm.The originally single peaked Gd 4 f spectrum evolved into a double peaked line with the increase of Gd coverage.We suggested that Gd atoms were adsorbed on the substrate in the form of clusters.

关 键 词：光电子能谱 钆 界面 电子结构 团簇 砷化镓 

分 类 号：O484.4[理学—固体物理]