晶片CMP后表面纳米颗粒的去除研究  

Study of Cleaning Method for Nanoparticles on Wafer Surface After CMP

作　　者：陈海涛[1] 檀柏梅[1] 刘玉岭[1] 牛新环[1] 刘金玉[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《半导体技术》2011年第1期11-13,21,共4页Semiconductor Technology

基　　金：02国家重大专项(2009zx02308);国家自然科学基金(10676008)

摘　　要：对晶片化学机械抛光(CMP)后表面吸附的纳米颗粒去除进行了研究,分析了晶片表面吸附物的种类及吸附机理。由于晶片表面吸附的有机物多为大分子物质,它在晶片表面的吸附除了容易处理的物理吸附外,还会和晶片表面构成化学键,形成难以处理的化学吸附。对清洗过程中颗粒的去除有严重的影响,提出利用电化学清洗,结合表面活性剂和兆声波清洗的方法去除晶片表面的纳米颗粒。经金相显微镜观察和原子力显微镜检测,晶片表面纳米颗粒能得到很好地去除,效果明显优于单纯的兆声波清洗方法。The cleaning method of nanoparticles on wafer surface after CMP was researched. The types of the adsorbate on wafer surface and the adsorption mechanism were analyzed. Because the organic matter on wafer surface affects the cleaning of the nanoparticles, it will cause physical adsorption which is easy to deal with, and will also constitute a chemical bond with the chip surface to form a chemical adsorption which is difficult to clean. The method for cleaning the nanoparticles using electrochemical approach, combined with surfactant and the megasonic cleaning was proposed. Observed by optical microscopy and atomic force microscopy, the cleaning effect of nanoparticles on wafer surface is much better than that of using the megasonic cleaning simple.

关 键 词：化学机械抛光 清洗 电化学 纳米颗粒 兆声清洗 

分 类 号：TN305.97[电子电信—物理电子学]