电子束抗蚀剂图形结构的倒塌与粘连  

Collapse and Adhesion of the Electron Resist Pattern Structure

作　　者：赵珉[1] 陈宝钦[2] 牛洁斌[2] 谢常青[2] 刘明[2] 

机构地区：[1]湛江师范学院信息科技与技术学院,广东湛江524048 [2]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029

出　　处：《微纳电子技术》2011年第1期63-68,共6页Micronanoelectronic Technology

基　　金：国家重点基础研究发展计划(973计划)资助项目(2006CB0N0604)

摘　　要：首先从实验现象出发,阐述了纳米级高密度、高深宽比电子抗蚀剂图形结构发生倒塌与粘连的主要几何因素及其关系。除了结构的几何因素外,结合"Beam Sway"模型分析了抗蚀剂微细结构在制作过程中的受力情况。在上述工作的基础上,提出了克服纳米级高密度、高深宽比电子抗蚀剂图形结构倒塌与粘连的相应措施。其中,通过实验验证了超临界CO2干燥技术对于电子束抗蚀剂ZEP520A用于制作周期200nm及150nm、深宽比超过4的光栅图形结构具有良好的效果。Based on the experimental phenomenon, main geometry factors and their relations were firstly analyzed, which cause the collapse and adhesion of high density and high aspect-ratio electron resist nano-patterns. Besides the geometry factors, the stress of the resist nano-pattern structure in the process was also analyzed combining ＂Beam Sway＂ model. Based on the above- mentioned work, the methods were proposed to restrain the collapse and adhesion of electron resist nano-patterns. Among these methods, the experiments prove that the supercritical CO2 drying technology has a good effect on ZEP520A to fabricate the grating patterns of 200 nm and 150 nm pitches with aspect-ratio more than 4.

关 键 词：电子束光刻 抗蚀剂 高深宽比 倒塌 超临界二氧化碳干燥 

分 类 号：TN305.7[电子电信—物理电子学]