SONOS结构EEPROM单元辐射效应分析  

The Research of Radiation Mechanism on SONOS of EEPROM Cell

作　　者：吕纯[1] 蒋婷[2] 周昕杰[2,3] 

机构地区：[1]江苏省无锡交通高等职业技术学院电气与信息工程系,江苏无锡214151 [2]中国电子科技集团公司第58研究所,江苏无锡214035 [3]东南大学电子科学与工程学院,南京210096

出　　处：《电子与封装》2010年第12期32-35,共4页Electronics & Packaging

摘　　要：随着EEPROM存储器件在太空和军事领域的广泛应用,对EEPROM抗辐射性能的研究越来越多。为了满足应用的需要,文章比较了FLOTOX和SONOS两种EEPROM工艺制成的存储单元在辐射条件下所受的影响,分析了FLOTOX和SONOS单元抗辐射性能的优劣,得出:SONOS结构的EEPROM单元,其抗辐射性能优于FLOTOX结构。并分析了在辐射条件下,SONOS结构受辐射影响的数学模型。文章的研究不但满足了目前的工作需要,还为以后抗辐射EEPROM研究提供了理论基础。As wide applications of EEPROM memory devices in space and military field,more and more researches focus on its radiation hardened characteristics in internationally.To improve the radiation hardened performance of EEPROM memory and meet the needs of special application,we studied two kinds of EEPROM cell：FLOTOX and SONOS.Then we compared characteristics on the basis of these technologies.We found out that the SONOS structure＇s characteristics are better than FLOTOX.Then we analyzed the model of SONOS under the radiation environment.This research not only satisfied the needs of present work,but supplies a worthful theory for EEPROM＇s radiation hardened in future.

关 键 词：SONOS EEPROM 辐射效应 非易失性存储器 FLOTOX 

分 类 号：TN303[电子电信—物理电子学]