TiO_2薄膜敏感特性研究  

On the Sensitivity of TiO_2 Thin Film

作　　者：肖梦秋[1] 汪荣昌[1] 顾志光[1] 戎瑞芬[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《传感技术学报》1999年第3期164-170,共7页Chinese Journal of Sensors and Actuators

摘　　要：利用 ＭＯＣＶＤ工艺可制备得到锐钛矿型ＴｉＯ２薄膜，在其上溅射金属 Ｐｔ并控制工艺流程的温度，Ｐｔ／ＴｉＯ２间将形成良好的金半整流接触．该Ｐｔ／ＴｉＯ２肖特基二极管在常温下表现出良好的气敏特性，响应时间短，对稳定环境中低分压气体浓度的变化反应灵敏．同时，该 Ｐｔ／ＴｉＯ２肖特基二极管还对约 ２５０－３７０ ｎｍ的紫外光敏感．本文研究了 Ｐｔ／ＴｉＯ２肖特基二极管气敏和光敏特性，分析了敏感机理．By controlling the process temperature, a Pt/TiO2 Schottky diode is obtained when sputtering Pt on the TiO2 thin film which is deposited by MOCVD. The I - V curve of such a Pt/TiO2 Schottky diode will shift according to the different gas circumstance. The diode exhibits high performance even under the room working temperature, and it is more sensitive to those gases whose partial pressure is relatively low, for instance H2O, H2 CO in the air. This paper describes the gas sensitivity of Pt/TiO2 diode, analyze its mechanism. The role of ultraviolet radiation in impactiong Pt/TiO2 diode I--V characteristics is also discussed.

关 键 词：肖特基二极管 MOCVD TIO2 伏安特性 

分 类 号：TN304.21[电子电信—物理电子学] TN311.7