不同偏置条件下CMOS SRAM的总剂量辐射效应  

Total Dose Irradiation Effects of CMOS SRAM Under Different Bias Conditions

作　　者：李茂顺[1,2,3] 余学峰[1,2] 任迪远[1,2] 郭旗[1,2] 李豫东[1,2] 高博[1,2,3] 崔江维[1,2,3] 兰博[1,2,3] 费武雄[1,2,3] 陈睿[1,2,3] 赵云[1,2,3] 

机构地区：[1]中国科学院新疆理化技术研究所,乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院研究生院,北京100049

出　　处：《微电子学》2011年第1期128-132,共5页Microelectronics

摘　　要：对1 Mb静态随机存取存储器(SRAM)进行了不同偏置条件下的总剂量辐照效应研究。结果表明,试验选取的CMOS SRAM器件为总剂量辐射敏感器件,辐照偏置条件对器件的电参数退化和功能失效有较大影响。在三种偏置条件中,静态加电为最劣偏置,其次是工作状态,浮空状态时器件的辐射损伤最小。在工作状态和静态加电两种偏置条件下,静态功耗电流的退化与器件功能失效密切相关,可作为器件功能失效的预警量。Total-dose irradiation effects were studied under different bias conditions.It has been shown that the CMOS SRAM device in the experiment is sensitive to total dose irradiation,and irradiation bias condition has great effect on electrical parameter degradation and functional failure.Among different bias conditions,standby mode is the worst condition,and operation mode is the next,and in floating mode,the circuit has the least irradiation damage.In both standby and operation modes,degradation of static current dissipation is closely related with functional failure,therefore,it can be used as a pre-warning value for device functional failure.

关 键 词：静态随机存取存储器 总剂量辐照 偏置条件 

分 类 号：TN386.1[电子电信—物理电子学]