化学机械抛光对铜互连器件的影响及失效分析  

Effect of CMP on Reliability of Cu Interconnect Devices and Related Failure Analysis

作　　者：林晓玲[1,2] 刘建 章晓文 侯通贤[1] 姚若河[1] 

机构地区：[1]华南理工大学电子与信息学院微电子研究所,广州510640 [2]电子元器件可靠性物理及其应用技术国家级重点实验室,工业和信息化部电子第五研究所,广州510610

出　　处：《微电子学》2011年第1期143-145,149,共4页Microelectronics

基　　金：电子元器件可靠性物理及其应用技术国家级重点实验室基金资助项目(9140C03010408DZ15)

摘　　要：探讨了Cu化学机械抛光(CMP)工艺引起Cu互连器件失效的原因以及对可靠性的影响,对Cu CMP工艺缺陷导致器件失效的案例进行分析。由于CMP的技术特点,不可避免地会产生一些工艺缺陷和工艺误差,从而引起器件失效。必须根据标准要求,出厂或封装前对圆片进行芯片功能参数测试和严格的镜检,以便在封装前剔除存在潜在工艺缺陷的芯片,达到既定可靠性要求。Mechanism of CMP caused failure in Cu interconnect device was analyzed,and its effect on reliability of the device was investigated.As an example,device failure caused by Cu CMP process defect was analyzed.Due to its technical characteristics,Cu CMP process would inevitably have some defects or errors,which might cause device failure.Therefore,functional parameter test and rigorous microscopic examination should be carried out strictly on the wafer before packaging according to relevant standards,to screen out dies with potential process defects.

关 键 词：化学机械抛光 CU互连 工艺缺陷 金属残留 

分 类 号：TN406[电子电信—微电子学与固体电子学]