衬底温度对直流磁控溅射法沉积ZnO∶Ti薄膜性能的影响  

Growth and Characterization of Ti-Doped ZnO Films by DC Magnetron Sputtering

作　　者：刘汉法[1] 张化福[1] 郭美霞[1] 史晓菲[1] 周爱萍[1] 

机构地区：[1]山东理工大学理学院,淄博255049

出　　处：《真空科学与技术学报》2011年第1期95-99,共5页Chinese Journal of Vacuum Science and Technology

基　　金：山东省自然科学基金资助项目(No.ZR2009GL015)

摘　　要：利用直流磁控溅射工艺,在石英玻璃衬底上沉积出了具有高度C轴择优取向的掺Ti氧化锌(ZnO∶Ti,TZO)透明导电薄膜。研究了衬底温度对TZO薄膜应力、结构和光电性能的影响。结果表明,衬底温度对TZO薄膜的结构、应力和电阻率有重要影响。TZO薄膜为六角纤锌矿结构的多晶薄膜。在衬底温度为100℃时,实验获得的TZO薄膜电阻率具有最小值2.95×10-4Ω.cm,400℃时薄膜出现孪晶,随着温度的升高,薄膜应力具有减小的趋势。实验制备的TZO薄膜附着性能良好,可见光区平均透过率都超过91%。The Ti-doped ZnO films were grown by D.C.magnetron sputtering on quartz glass substrates.The impacts of the deposition conditions,including Ti doping level,substrate temperature,and deposition rate,on film growth were studied.Its microstructures and properties were characterized with X-ray diffraction,scanning electron microscopy,and conventional probes.The results show that the substrate temperature strongly affects the microstructures and properties of the films.For example,at 100℃,its resistivity minimized to 2.95×10-4 Ω·cm;at 400℃,twin crystalline grains were observed.Besides,as the substrate temperature increased,its stress tended to decrease.

关 键 词：ZnO∶Ti薄膜 透明导电薄膜 衬底温度 磁控溅射 

分 类 号：O484.1[理学—固体物理]