14.5～15GHz 11W内匹配功率器件  

14.5-15 GHz 11 W Internally-Matched Power Devices

作　　者：康建磊[1] 杨克武[1,2] 吴洪江[2] 吴阿慧[2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2011年第3期190-193,共4页Semiconductor Technology

摘　　要：介绍了一种采用GaAs PHEMT管芯设计的超高频内匹配功率器件。为了在更高的频率获得较高的输出功率,采用0.25μm栅长的PHEMT工艺,制作了总栅宽19.2 mm的大功率管芯。采用频带较宽的微带渐变传输线和T型网络共同组成栅极和漏极的匹配电路,并对封装管壳进行优化,有效提高了器件的微波特性。在带内频率14.5～15 GHz、漏源电压Vds为8 V时,器件输出功率大于40.4 dBm(11 W),线性功率增益为7 dB,功率附加效率大于23%。Based on GaAs PHEMT,an ultrahigh frequency internally matched power device was presented.In order to obtain the higher output power in the higher frequency,the device with 19.2 mm gate width was fabricated by 0.25 μm PHEMT process.The microwave performance of the power device was enhanced by combining the improved matching c ircuit which contains the tapered transmission line and T-network with the improved package structure.While the drain supply voltage is 8 V,the device delivers a saturation output power more than 40.4 dBm（11 W）,a power gain of 7 dB and a power added efficiency more than 23% at the frequency of 14.5-15 GHz.

关 键 词：GAAS PHEMT 内匹配 高频器件 输入阻抗 输出阻抗 

分 类 号：TN323.4[电子电信—物理电子学] TN304.23