用于InP基DHBT制备的GaAs_(0.51)Sb_(0.49)湿法腐蚀研究(英文)  

Study on Wet Etching of GaAs_(0.51)Sb_(0.49) Used for InP Based DHBT Fabrication

作　　者：孙浩[1] 齐鸣[1] 艾立鹍[1] 徐安怀[1] 滕腾[1,2] 朱福英[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院研究生院,北京100049

出　　处：《电子器件》2011年第1期12-16,共5页Chinese Journal of Electron Devices

基　　金：National Basic Research Program of China(2010CB327502);National Natual Science Foundation of China(60676022)

摘　　要：介绍了采用基于柠檬酸、硫酸和磷酸的腐蚀溶液对气态分子束外延生长的InP衬底上GaAs0.51Sb0.49湿法腐蚀研究工作。对不同体积比的腐蚀溶液的腐蚀速率和表面粗糙度进行了研究。和硫酸及磷酸基腐蚀液相比,柠檬酸/双氧水腐蚀液的腐蚀速率较慢但具有很好的表面粗糙度。作为验证,采用最优体积比5:1的柠檬酸/双氧水腐蚀溶液,工艺制备出InP/GaAsSbDHBT器件。We present a study of wet etching of GaAs0.51Sb0.49 grown on InP substrate with gas source molecular beam epitaxy（GSMBE）using citric acid,sulfuric acid as well as phosphoric acid based solutions.The etching rate and roughness of the etched surfaces were investigated with different volume ratio of the solutions.The citric acid/hydrogen peroxide solutions exhibit a slow etching rate but good roughness compared to the sulfuric acid and phosphoric acid based solutions.With the optimal volume ratio 5：1 of the citric acid/hydrogen peroxide etchant,the InP/GaAsSb DHBT device was processed and fabricated as a good evaluation.

关 键 词：镓砷锑 湿法腐蚀 磷化铟 双异质结晶体管 

分 类 号：TN405[电子电信—微电子学与固体电子学]