X波段GaN单片电路低噪声放大器  

X-band GaN MMIC Low Noise Amplifier

作　　者：周建军[1] 彭龙新[1] 孔岑[1] 李忠辉[1] 陈堂胜[1] 焦刚[1] 李建平[1] 

机构地区：[1]单片集成电路和模块国家级重点实验室南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2011年第1期16-19,共4页Research & Progress of SSE

摘　　要：采用0.25μm GaN HEMT制备工艺在AlGaN/GaN异质结材料上研制了高性能X波段GaN单片电路低噪声放大器。GaN低噪声单片电路采取两级微带线结构,10 V偏压下芯片在X波段范围内获得了低于2.2 dB的噪声系数,增益达到18 dB以上,耐受功率达到了27 dBm。在耐受功率测试中发现GaN低噪声HEMT器件存在一定的恢复效应,并进行了相应讨论。A high performance GaN MMIC low noise amplifier based on 0.25 μm AlGaN/GaN HEMT technology on SiC substrate is presented operating in the X-band. A noise figure NF below 2.2 dB is measured from 8.5～10.5 GHz under 10V.And a linear gain G of the MMIC higher than 18 dB is also measured.The survivability of the LNA is assessed by the stress-tests,in the input up to 27 dBm for 10 min.During the stress-tests,a recovering effect of the GaN low noise HEMT is observed.

关 键 词：低噪声放大器 微波单片集成电路 氮化镓高迁移率晶体管 

分 类 号：TN722.3[电子电信—电路与系统] TN43