超薄硅双面抛光片抛光工艺技术  

Polishing Process Technology of Ultra-thin Silicon Double Sides Polished Wafer

作　　者：赵权[1] 杨洪星[1] 刘春香[1] 吕菲[1] 王云彪[1] 武永超[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2011年第3期21-23,42,共4页Equipment for Electronic Products Manufacturing

摘　　要：MEMS器件、保护电路、空间太阳电池等的制作需要使用硅双面抛光片,并且要求抛光片的厚度很薄,传统的硅抛光片加工工艺已经不能满足这一要求。介绍了一种用于超薄硅单晶双面抛光片加工的抛光工艺方法。通过对硅片抛光机理[1]、抛光方式、抛光工艺的研究和对抛光工艺试验结果的分析,解决了超薄硅单晶双面抛光片在加工过程中碎片率高、抛光片背面表面质量不易控制的技术难题,研制出了高质量的超薄硅单晶双面抛光片。The silicon double sides polished wafers had been widely used during the manufacture procedure of MEMS device,protective circuits,and solar cell.The traditional silicon polishing process wasn＇t suitable for these application for the thickness of the wafers was very thin.The article introduced one polishing process technology for ultra thin silicon double sides polished wafer.Through the research of silicon polishing mechanism,polishing method,and polished process and the analysis of the experiment results,it was figured out that the technology problem of the polished process such as the breakage rate and the back side surface quality of the polished wafers during the polishing procedure.The high quality ultra thin silicon polished wafers were successfully prepared.

关 键 词：超薄 硅双面抛光片 抛光工艺 

分 类 号：TN305.2[电子电信—物理电子学]