退火温度对用PⅢ方法制备共掺杂p型ZnO薄膜结构和性能的影响  

Effect of annealing temperature on properties of Al-N co-doped p-type ZnO films prepared by Plasma Immersion Ion Implantation

作　　者：杜记龙[1] 江美福[1] 张树宇[2] 王培君[1] 辛煜[1] 

机构地区：[1]苏州大学物理科学与技术学院,江苏苏州215006 [2]复旦大学现代物理研究所,上海200433

出　　处：《苏州大学学报（自然科学版）》2011年第1期52-57,共6页Journal of Soochow University(Natural Science Edition)

基　　金：国家自然科学基金(10635010)

摘　　要：采用射频磁控共溅射的方法制备出ZnO:Al薄膜,以NO和O2为源气体(V(O2)/V(O2+NO)=75%),采用等离子体浸没离子注入(PⅢ)方法对薄膜进行注入得到ZnO:Al:N薄膜,注入剂量为2.23×1015 cm-2,并在N2氛围下对样品进行了不同温度的退火处理.通过XRD图谱、霍尔效应(Hall)测试结果、紫外-可见光透射光谱等对样品的结构和性能进行了分析,着重研究了退火温度对ZnO:Al:N薄膜性质的影响.结果表明,退火可以使注入产生的ZnO(N2)3团簇分解,并且使N以替位O的方式存在.当退火温度达到850℃时,ZnO薄膜实现了p型反转,实现p型反转的ZnO:Al:N薄膜载流子浓度可达3.68×1012 cm-3,电阻率为11.2Ω.cm,霍耳迁移率为31.4 cm2.V-1.s-1.ZnO：Al films were prepared by radio-frequency（RF） magnetron co-sputtering system,and then ZnO：Al：N films were synthesized by using the method of the plasma immersion ions implantation（PⅢ） with NO and O2 as source gases（VO2/V（O2＋NO）=75%）,the implanted dose was 2.23×1015cm-2,and then the films were annealed in N2 ambience at different temperature.The structural,electrical and optical properties of the ZnO：Al：N films were studied with the help of X-ray Diffraction（XRD）、Hall effect test system and UV-visible spectrometer.The results indicate that annealing would disassemble ZnO（N2）3,and N existed in the form of N-Al and N-Zn bonds by occupying the O vacancy（VO） and substituting O atoms.When the anneal temperature reached 850 ℃ the p-type ZnO films was achieved.And the carrier concentration,Hall mobility and resistivity of the p-type ZnO：Al：N films are 3.68×1012 cm-3,31.4 cm2·V-1·s-1 and 11.2 Ω·cm respectively.The effect of the anneal temperature to the structural,electrical and optical properties of ZnO：Al：N films were studied.

关 键 词：等离子体浸没离子注入 p-ZnO 磁控溅射 共掺杂 

分 类 号：O484[理学—固体物理]