铁电PbZr_(0.53)Ti_(0.47)O_3薄膜的磁增强反应离子刻蚀  

Magnetically Enhanced Reactive Ion Etching of Ferroelectric PbZr_(0.53)Ti_(0.47)O_3 Thin Film

作　　者：刘秦[1] 林殷茵[1] 吴小清[1] 张良莹[1] 姚熹[1] 

机构地区：[1]西安交通大学电子材料实验室,西安710049

出　　处：《Journal of Semiconductors》1999年第11期1044-1048,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：采用磁增强反应离子刻蚀（ＭＥＲＩＥ）工艺获得了铁电ＰｂＺｒ０５３Ｔｉ０４７Ｏ３（ＰＺＴ）薄膜的微细图形．研究了用ＣＨＦ３ 气体在不同射频功率和气体流量下ＰＺＴ薄膜、Ｐｔ和ＡＺ１４５０Ｊ光刻胶的刻蚀速率以及刻蚀选择性的实验规律．原子力显微镜（ＡＦＭ）结果表明，获得的ＰＺＴ薄膜图形具有较高的各向异性．化学分析电子能谱（ＥＳＣＡ）结果表明，在ＣＨＦ３ 等离子体中Ｐｔ表面形成了一层碳氟聚合物薄膜，它对Ｐｔ 的刻蚀起到钝化和保护的作用，并且最后可以在３００℃热处理３０ｍ ｉｎ 被消除．PbZr\-\{0\^53\}Ti\-\{0\^47\}O\-3(PZT)thin film are patterned through magnetically enhanced reactive ion etcher technology.The etching rate and selectivity of PZT,Pt and AZ1450J photoresist films are studied at different CHF\-3 flow rate and coil RF power.The atom force microscopy(AFM) observation indicates the high anisotropy of PZT micropattern etched at low CHF\-3 flow rate and RF power.The formed C and F containing polymer film on the surface of Pt subjected to CHF\-3 plasma,revealed by the ESCA,prevents the CHF\-3 plasma from etching the Pt and thus would be beneficial for long time etching of PZT film.The polymer film can be finally removed by thermal annealing at 300℃ for 30 minutes.

关 键 词：PZT薄膜 铁电材料 MERIE工艺 刻蚀 

分 类 号：TN304.905[电子电信—物理电子学]