(Al_xGa_(1-x))_yIn_(1-y)P表面氧化特性  

PROPERTIES OF OXIDATION ON THE (Al x Ga 1- x ) yIn 1- y P SURFACE

作　　者：连洁[1] 张淑芝[1] 许进 黄柏标[2] 崔德良[2] 秦晓燕[2] 

机构地区：[1]山东大学光电系 [2]山东大学晶体国家重点实验室

出　　处：《山东大学学报（自然科学版）》1999年第2期170-175,共6页Journal of Shandong University(Natural Science Edition)

摘　　要：利用双层吸收膜模型，采用消光式椭圆偏振仪，对用ＭＯＣＶＤ方法生长的（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（本征）、（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（掺Ｍｇ）和（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（掺Ｓｉ）３个样品及它们的表面氧化膜的光学参数进行了测量和计算，并对其结果加以讨论．另外还在室温下对（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（本征）表面氧化膜的生长速率及其厚度进行研究。The optical parameters for three samples of intrinsic,doped Si and doped Mg (Al x Ga 1- x ) yIn 1- y P prepared by the MOCVD on the GaAs substrate were measured by using the null-type ellipsometry and were calculated by the model of double layer absorption film.The results obtained were discussed.The grown rates and thickness of oxide film on the intrinsic (Al x Ga 1- x ) yIn 1- y P surface exposed in the ambient air were studied.A linear dependent of oxide film thickness on the time was obtained.

关 键 词：氧化膜 光学参数 四元半导体 ALGAINP 表面氧化 

分 类 号：TN304.23[电子电信—物理电子学] O472.1[理学—半导体物理]