溅射时间对AZO薄膜结构以及光电性能的影响  

Influence of Sputtering Time on Structure and Properties of AZO Film

作　　者：李晓波[1] 杨瑞霞[1] 王静辉[2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2011年第5期359-362,共4页Semiconductor Technology

摘　　要：应用直流磁控溅射在石英玻璃上生长AZO薄膜,利用X射线双晶衍射(XRD)、四探针以及可见光分光光度计,对薄膜结构特性、光学以及电学特性进行了分析,并讨论了溅射时间对薄膜晶体结构、膜厚、方块电阻以及透过率的影响。针对AZO在LED中作为电流扩展层的应用,利用光学模拟软件TFCalc对AZO以及SiO2构成的双层膜的透过率进行了模拟,用溅射和PECVD分别生长AZO以及SiO2薄膜加以验证。通过适当的调节薄膜厚度,可使透光率在可见光波段有整体上的提升。The AZO film was deposited by DC magnetron sputtering on quartz glass.The structure,the optical and electrical properties of the AZO film were analyzed by XRD,fourk-point probe and visible photometer.The influence of the sputtering time on the crystal structure,film thickness,sheet resistance and transmittance were discussed.For using AZO as a current spread layer in LED chip,the transmittance of AZO/SiO2 double layer was simulated by TFCalc,and verified by PECVD and sputtering systems.The result shows that the AZO/SiO2 layers have a higher transmittance in the visible light region with appropriate film thickness.

关 键 词：直流磁控溅射 AZO薄膜 X射线衍射 方块电阻 透光率 

分 类 号：TN304.21[电子电信—物理电子学]